參數(shù)資料
型號(hào): RN2109
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進(jìn)步黨(厘進(jìn)程)
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 177K
代理商: RN2109
RN2107 RN2109
2001-06-07
4
相關(guān)PDF資料
PDF描述
RN2112FT IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines (incl. FADC): 14; Program Memory: 128.0 KByte;
RN2113FT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2112 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2113 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2501 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN2109ACT 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109CT 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
RN2109CT(TPL3) 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP CST3 -20V -50A
RN2109F 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109FS(TPL3) 功能描述:開關(guān)晶體管 - 偏壓電阻器 -50mA -20volts 3Pin 47K x 22Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel