參數(shù)資料
型號: RN2112
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
中文描述: 開關(guān),逆變電路,接口電路和驅(qū)動電路的應(yīng)用
文件頁數(shù): 1/3頁
文件大?。?/td> 84K
代理商: RN2112
RN2112FT,RN2113FT
2002-01-24
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN2112FT,RN2113FT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
High-density mount is possible because of devices housed in very thin
TESM packages.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Wide range of resistor values are available to use in various circuit
designs.
Complementary to RN1112FT, RN1113FT
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: g (typ.)
R1
B
C
E
相關(guān)PDF資料
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