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參數(shù)資料
| 型號(hào)： | RN2108 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| 中文描述： | 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | RN2108 |
RN2107 RN2109
2001-06-07
1
Type No.
R1 (k
)
R2 (k
)
RN2107
10
47
RN2108
22
47
RN2109
47
22
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107,RN2108,RN2109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1107~RN1109
Equivalent Circuit and Bias Resister Values
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2107~RN2109
V
CEO
50
V
RN2107
6
RN2108
7
Emitter-base voltage
RN2109
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
100
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2107~RN2109
T
stg
55~150
C
*: Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
―
―
2-2H1A
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN2109 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2112FT | IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines (incl. FADC): 14; Program Memory: 128.0 KByte; |
| RN2113FT | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| RN2112 | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2113 | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN2108ACT | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2108CT | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
| RN2108CT(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP CST3 -20V -50A |
| RN2108F | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2108FS(TPL3) | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 -50mA -20volts 3Pin 22K x 47Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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