參數(shù)資料
型號(hào): RN1907
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 178K
代理商: RN1907
RN1907~RN1909
2001-06-07
2
Electrical Characteristics (Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= 50V, I
E
= 0
100
nA
Collector cut-off current
RN1907~1909
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1907
V
EB
= 6V, I
C
= 0
0.081
0.15
RN1908
V
EB
= 7V, I
C
= 0
0.078
0.145
Emitter cut-off current
RN1909
I
EBO
V
EB
= 15V, I
C
= 0
0.167
0.311
mA
RN1907
80
RN1908
80
DC current gain
RN1909
h
FE
V
CE
= 5V, I
C
= 10mA
70
Collector-emitter
saturation voltage
RN1907~1909
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1
0.3
V
RN1907
0.7
1.8
RN1908
1.0
2.6
Input voltage (ON)
RN1909
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
2.2
5.8
V
RN1907
0.5
1.0
RN1908
0.6
1.16
Input voltage (OFF)
RN1909
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
1.5
2.6
V
Translation frequency
RN1907~1909
f
T
V
CE
= 10V, I
C
= 5mA
250
MHz
Collector output capacitance RN1907~1909
C
ob
V
CB
= 10V, I
E
= 0,
f = 1MHz
3
6
pF
RN1907
7
10
13
RN1908
15.4
22
28.6
Input resistor
RN1909
R1
32.9
47
61.1
k
RN1907
0.191
0.213
0.232
RN1908
0.421
0.468
0.515
Resistor ratio
RN1909
R1/R2
1.92
2.14
2.35
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