參數(shù)資料
型號： RN1963FE
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
中文描述： 東芝npn型晶體管硅外延型（厘進(jìn)程）（偏置電阻內(nèi)置晶體管）
文件頁數(shù)： 1/4頁
文件大?。?/td> 95K
代理商： RN1963FE
RN1961FE~RN1966FE
2002-01-29
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961FE,RN1962FE,RN1963FE
RN1964FE,RN1965FE,RN1966FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
Complementary to RN2961FE~RN2966FE
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1961FE~
1966FE
V
CEO
50
V
RN1961FE~
1964FE
10
Emitter-base voltage
RN1965FE,
1966FE
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
(Note)
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
RN1961FE~
RN1966FE
T
stg
55~150
°C
Note: Total rating
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
Equivalent Circuit
(top view)
6
5
4
1
2
3
Q2
Q1
R1
R
B
C
E
Type No.
R1 (k )
R2 (k )
RN1961FE
4.7
4.7
RN1962FE
10
10
RN1963FE
22
22
RN1964FE
47
47
RN1965FE
2.2
47
RN1966FE
4.7
47
相關(guān)PDF資料
PDF描述
RN1961 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1963 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN2007 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2008 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN1963FE(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN ES6 制造商:Toshiba America Electronic Components 功能描述:Transistors Switching - Resistor Biased BRT NPN 2-in-1 100mA 50V
RN1963FS 功能描述:開關(guān)晶體管 - 偏壓電阻器 INCORRECT MOUSER P/N 22K x 22Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
RN1963FS(TPL3) 功能描述:開關(guān)晶體管 - 偏壓電阻器 50mA 20volts 6Pin 22K x 22Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
RN1964 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1964CT 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
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