參數(shù)資料
型號(hào): RN1909
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 178K
代理商: RN1909
RN1907~RN1909
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1907,RN1908,RN1909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2907~RN2909
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1907~1909
V
CEO
50
V
RN1907
6
RN1908
7
Emitter-base voltage
RN1909
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1907~1909
T
stg
55~150
C
*: Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
Type No.
R1 (k
)
R2 (k
)
RN1907
10
47
RN1908
22
47
RN1909
47
22
Unit: mm
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