參數(shù)資料
型號(hào): RN1907
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 178K
代理商: RN1907
RN1907~RN1909
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1907,RN1908,RN1909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2907~RN2909
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1907~1909
V
CEO
50
V
RN1907
6
RN1908
7
Emitter-base voltage
RN1909
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1907~1909
T
stg
55~150
C
*: Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
Type No.
R1 (k
)
R2 (k
)
RN1907
10
47
RN1908
22
47
RN1909
47
22
Unit: mm
相關(guān)PDF資料
PDF描述
RN1908 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1961FE CONNECTOR ACCESSORY
RN1963FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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