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參數(shù)資料
| 型號(hào)： | RLP1N08LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET |
| 中文描述： | 1.5 A, 80 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大小： | 53K |
| 代理商： | RLP1N08LE |
6-439
NOTE: Heatsink thermal resistance = 5
o
C/W
FIGURE 13. MAXIMUM V
DS
vs T
A
IN CURRENT LIMITING
NOTE: Heatsink thermal resistance = 10
o
C/W
FIGURE 14. MAXIMUM V
DS
vs T
A
IN CURRENT LIMITING
NOTE: Heatsink thermal resistance = 25
o
C/W
FIGURE 15. MAXIMUM V
DS
vs T
A
IN CURRENT LIMITING
NOTE: No external heatsink.
FIGURE 16. MAXIMUM V
DS
vs T
A
IN CURRENT LIMITING
NOTE: Heatsink thermal resistance = 2
o
C/W
Heatsink thermal capacitance = 4j/
o
C
FIGURE 17. TIME TO 150
o
C IN CURRENT LIMITING
NOTE: Heatsink thermal resistance = 5
o
C/W
Heatsink thermal capacitance = 2j/
o
C
FIGURE 18. TIME TO 150
o
C IN CURRENT LIMITING
Typical Performance Curves
Unless Otherwise Specified
(Continued)
80
60
40
20
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
DUTY CYCLE = 20%
50%
10%
5%
2%
1%
T
J
= 150
o
C
I
LIM
= 1.5A
R
θ
JC
= 4.17
o
C/W
MAX PULSE WIDTH = 100ms
80
60
40
20
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
DUTY CYCLE = 20%
5%
2%
1%
50%
T
J
= 150
C
I
LIM
= 1.5A
R
θ
JC
= 4.17
o
C/W
MAX PULSE WIDTH = 100ms
10%
80
60
40
20
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
DUTY CYCLE = 2%
1%
5%
10%
20%
50%
MAX PULSE WIDTH = 100ms
T
J
= 150
o
C
I
LIM
= 1.5A
R
θ
JC
= 4.17
o
C/W
80
60
40
20
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
DUTY CYCLE = 1%
2%
5%
10%
20%
50%
MAX PULSE WIDTH = 100ms
T
J
= 150
o
C
I
LIM
= 1.5A
R
θ
JC
= 4.17
o
C/W
8
6
4
2
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
T
o
C
R
θ
JC
=
4.17
o
C/W
STARTING
TEMP = 25
o
C
125
o
C
100
o
C
75
o
C
50
o
C
8
6
4
2
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
T
o
C
STARTING
TEMP = 25
o
C
125
o
C
100
o
C
75
o
C
50
o
C
R
θ
JC
= 4.17
o
C/W
RLP1N08LE
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