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參數(shù)資料
| 型號： | RLP1N08LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET |
| 中文描述： | 1.5 A, 80 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 53K |
| 代理商： | RLP1N08LE |
6-437
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
FIGURE 3. NORMALIZED CURRENT LIMIT vs CASE
TEMPERATURE
FIGURE 4. SATURATION CHARACTERISTICS
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
10
1.0
0.1
I
D
,
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
I
D
MAX AT 25
o
C
I
D
MIN AT 150
o
C
T
J
= MAX RATED
100
μ
s
1ms
10ms
DC
V
DSS
MAX = 80V
-50
0
T
C
, CASE TEMPERATURE (
o
C)
50
100
150
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
DS
= 10V, V
GS
= 5V
2.0
1.5
1.0
0.5
0
N
3.0
2.5
2.0
1.0
0.5
00
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
5
I
D
,
T
C
= 25
o
C
V
GS
= 10V
8V
6V
5V
4V
3V
2V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
4.2
3.5
2.8
2.1
1.4
0.7
00
2.5
5.0
7.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
-55
o
C
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
= 15V
PULSE TEST
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
2.0
1.5
1.0
0.5
0
N
V
GS
= 5V, I
D
= 1A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
RLP1N08LE
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