參數(shù)資料
型號(hào): RLP1N08LE
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET
中文描述: 1.5 A, 80 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 4/9頁
文件大?。?/td> 53K
代理商: RLP1N08LE
6-438
FIGURE 7. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. SWITCHING TEST CIRCUIT
FIGURE 11. DC OPERATION IN CURRENT LIMITING
NOTE: Heatsink thermal resistance = 2
o
C/W
FIGURE 12. MAXIMUM V
DS
vs T
A
IN CURRENT LIMITING
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
1.4
1.2
1.0
0.8
0.6
N
B
I
D
= 250
μ
A
0.4
-50
0
50
100
150
T
J
, JUNCTION TEMPERATURE (
o
C)
1.2
1.0
0.9
0.8
0.7
N
T
1.1
V
GS
= V
DS
I
D
= 250
μ
A
0.6
500
400
300
200
100
00
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
C
RSS
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
G
D
S
V
DS
V
DD
V
GS
R
L
R
GS
0
+
20
15
10
5
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
T
J
= 150
o
C
I
LIM
= 1.5A
R
θ
JC
= 4.17
o
C/W
1
o
C/W
25
o
C/W
HSTR = 0
o
C/W
10
o
C/W
5
o
C/W
2
o
C/W
FREE AIR R
θ
JC
= 80
o
C/W
80
60
40
20
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
V
D
,
T
J
= 150
o
C, I
LIM
= 1.5A, R
θ
JC
= 4.17
o
C/W
MAX PULSE WIDTH = 100ms
DUTY CYCLE = 20%
50%
10%
5%
2% 1%
RLP1N08LE
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