參數(shù)資料
型號： RLP1N08LE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET
中文描述： 1.5 A, 80 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/9頁
文件大?。?/td> 53K
代理商： RLP1N08LE
6-436
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RLP1N08LE
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Electrostatic Voltage at 100pF, 1500
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ESD
80
V
80
V
2
kV
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Self Limited
5.5
V
30
W
0.24
W/
o
C
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
-55 to 150
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V, Figure 7
80
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A, Figure 8
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 65V, V
GS
= 0V
T
C
= 25
o
C
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= 5V, T
C
= 150
o
C
-
-
50
μ
A
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 1A, V
GS
= 5V
Figure 6
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
-
-
0.750
-
-
1.5
Limiting Current
I
DS(Lim)
V
DS
= 15V, V
GS
= 5V
Figure 3
1.8
-
3
A
1.1
-
1.5
A
Turn-On Time
t
(ON)
V
DD
= 30V, I
D
= 1A, V
GS
= 5V, R
GS
= 25
R
L
= 30
-
-
6.5
μ
s
Turn-On Delay Time
t
d(ON)
-
-
1.5
μ
s
Rise Time
t
r
1
-
5
μ
s
Turn-Off Delay Time
t
d(OFF)
-
-
7.5
μ
s
Fall Time
t
f
1
-
5
μ
s
Turn-Off Time
t
(OFF)
-
-
12.5
μ
s
Thermal Resistance Junction to Case
R
θ
JC
-
-
4.17
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-220AB
-
-
62
o
C/W
Electrostatic Voltage
ESD
Human Model (100pF, 1.5k
)
2000
-
-
V
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= 1A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 1A
-
-
1
ms
NOTES:
2. Pulsed: pulse duration =
≤
300
μ
s maximum, duty cycle =
≤
2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
RLP1N08LE
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