參數(shù)資料
型號： RLP03N06CLE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
中文描述： 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 4/9頁
文件大?。?/td> 93K
代理商： RLP03N06CLE
6-421
FIGURE 6. TRANSFER CHARACTERISTICS
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 11. NORMALIZED DRAIN LIMITING CURRENT vs
JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
25
o
C
175
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
2
3
4
5
1
0
0.30
0.40
I
D
,
-55
o
C
0.50
0.60
0.20
0.10
PULSE TEST
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
, JUNCTION TEMPERATURE (
o
C)
0
-80
0.5
1.0
1.5
2.0
2.5
-40
0
40
80
120
160
200
N
I
D
= 0.10A
V
GS
= 5V,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
T
J
, JUNCTION TEMPERATURE (
o
C)
-80
-40
0
40
80
120
200
160
0
0.5
1.0
1.5
2.0
T
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
S
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 10mA
300
100
00
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
C
RSS
200
C
OSS
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
N
2.0
1.0
0.5
0
-80
1.5
T
J
, JUNCTION TEMPERATURE (
o
C)
-40
0
40
80
120
160
200
V
GS
= 5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
相關PDF資料
PDF描述
RLD03N06CLE 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
RLD03N06CLESM 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
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