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參數(shù)資料
| 型號(hào)： | RLP03N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 93K |
| 代理商： | RLP03N06CLE |
6-418
File Number
3948.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RLD03N06CLE, RLD03N06CLESM,
RLP03N06CLE
0.3A, 60V 6 Ohm, ESD Rated, Current
Limited, Voltage Clamped, Logic Level
N-Channel Power MOSFETs
These are intelligent monolithic power circuits which
incorporate a lateral bipolar transistor, resistors, zener
diodes and a power MOS transistor. The current limiting of
these devices allow it to be used safely in circuits where a
shorted load condition may be encountered. The drain to
source voltage clamping offers precision control of the circuit
voltage when switching inductive loads. The “Logic Level”
gate allows this device to be fully biased on with only 5V
from gate to source, thereby facilitating true on-off power
control directly from logic level (5V) integrated circuits.
These devices incorporate ESD protection and are designed
to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49028.
Features
0.30A, 60V
r
DS(ON)
= 6.0
Built in Current Limit I
LIMIT
0.140 to 0.210A at 150
o
C
Built in Voltage Clamp
Temperature Compensating PSPICE
Model
2kV ESD Protected
Controlled Switching Limits EMI and RFI
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RLD03N06CLE
TO-251AA
03N06C
RLD03N06CLESM
TO-252AA
03N06C
RLP03N06CLE
TO-220AB
03N06CLE
NOTE: Whenordering,usethe entire partnumber.Add the suffix 9A to
obtaintheTO-252AAvariantintapeandreel,i.e.RLD03N06CLESM9A.
G
S
D
JEDEC TO-251AA
JEDEC TO-252AA
JEDEC TO-220AB
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
July 1999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RLD03N06CLE | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管) |
| RLD03N06CLESM | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管) |
| RLP03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLESM | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
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