參數(shù)資料
型號： RLP03N06CLE
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
中文描述： 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 3/9頁
文件大?。?/td> 93K
代理商： RLP03N06CLE
6-420
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. FORWARD BIAS SAFE OPERATING AREA
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. SELF-CLAMPED INDUCTIVE SWITCHING
FIGURE 5. SATURATION CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
I
D
,
0.1
1
175
o
C
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
25
o
C
DC
T
C
= 25
o
C, T
J
= MAX RATED
OPERATION IN THIS
AREA IS LIMITED BY
JUNCTION TEMPERATURE
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
SINGLE PULSE
t
AV
, TIME IN CLAMP (s)
0.01
0.1
1
10
I
(
,
0.1
1
25
o
C
50
o
C
75
o
C
0.001
100
o
C
125
o
C
150
o
C
TEMPERATURES LISTED ARE STARTING
JUNCTION TEMPERATURES
T
C
= 25
o
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
D
,
0
0.10
0.20
0.30
0
1
2
3
4
5
V
GS
= 3V
V
GS
= 4V
V
GS
= 7.5V
V
GS
= 5V
0.40
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
相關PDF資料
PDF描述
RLD03N06CLE 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
RLD03N06CLESM 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管)
RLP03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLE 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
RLD03N06CLESM 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs
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