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參數(shù)資料
| 型號： | RLP03N06CLE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| 中文描述： | 60 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 93K |
| 代理商： | RLP03N06CLE |
6-419
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RLD03N06CLE, RLD03N06CLESM,
RLP03N06CLE
60
60
+5.5
Self Limited
30
0.2
2
-55 to 175
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
W
W/
o
C
KV
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= 45V,
V
GS
= 0V
60
-
85
V
Gate Threshold Voltage
1
-
2.5
V
Zero Gate Voltage Drain Current
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 150
o
C
-
-
25
μ
A
μ
A
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
V
GS
= 5V
-
-
5
-
-
20
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 0.100A,
V
GS
= 5V
-
-
6.0
-
-
12.0
Limiting Current
I
DS(LIMIT)
V
DS
= 15V,
V
GS
= 5V
280
-
420
mA
140
-
210
mA
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= 30V, I
D
= 0.10A,
R
L
= 3
00
, V
GS
= 5V,
R
GS
= 25
-
-
7.5
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
Turn-On Delay Time
-
-
2.5
Rise Time
-
-
5.0
Turn-Off Delay Time
-
-
7.5
Fall Time
-
-
5.0
Turn-Off Time
-
-
12.5
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
100
-
pF
Output Capacitance
-
65
-
pF
Reverse Transfer Capacitance
-
3.0
-
pF
Thermal Resistance Junction to Case
-
-
5.0
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-220 Package
-
-
80
TO-251 and TO-252 Packages
-
-
100
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 0.1A
-
-
1.5
V
Diode Reverse Recovery Time
t
rr
I
SD
= 0.1A, dI
SD
/dt = 100A/
μ
s
-
-
1.0
ms
NOTES:
2. Pulsed: pulse duration =
≤
300
μ
s maximum, duty cycle =
≤
2%.
3. Repititive rating: pulse width limited by maximum junction temperature.
RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
相關PDF資料 |
PDF描述 |
|---|---|
| RLD03N06CLE | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| RLD03N06CLESM | 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs(0.3A, 60V, 6Ω , ESD 額定,電流限制,電壓箝位,邏輯電平N溝道功率MOS場效應管) |
| RLP03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLE | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RLD03N06CLESM | 0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs |
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