參數(shù)資料
型號(hào)： RFV10N50
廠(chǎng)商： Intersil Corporation
英文描述： 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs
中文描述： 10A條的500V，快速切換N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù)： 6/6頁(yè)
文件大小： 66K
代理商： RFV10N50
6
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Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
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S E M I C O N D U C T O R
RFV10N50BE
Packaging
TERMINAL CONNECTIONS
Lead No. 1
-
Gate 1 (G
1
)
-
Gate 2 (G
2
)
-
Drain (D)
Lead No. 2
Lead No. 3 and
Mounting Flange
Lead No. 4
-
Source Kelvin (S
K
)
-
Source (S)
Lead No. 5
A
b
b
1
b
2
c
D
E
e
1
L
L
1
R
1
2
3 4
5
e
Q
S
J
1
P
1
2
3
4
5
BACK VIEW
TERM. 6
TO-247
5 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
SYMBOL
INCHES
MILLIMETERS
NOTES
MIN
MAX
MIN
MAX
A
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b
1
b
2
c
0.060
0.070
1.53
1.77
1, 2
0.095
0.105
2.42
2.66
1, 2
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
-
e
0.110 TYP
2.79 TYP
4
e
1
J
1
L
0.438 BSC
11.12 BSC
4
0.090
0.105
2.29
2.66
5
0.620
0.640
15.75
16.25
-
L
1
P
0.145
0.155
3.69
3.93
1
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
R
0.195
0.205
4.96
5.20
-
S
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L
1
.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
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