參數(shù)資料
型號(hào)： RFV10N50
廠商： Intersil Corporation
英文描述： 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs
中文描述： 10A條的500V，快速切換N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 3/6頁
文件大小： 66K
代理商： RFV10N50
3
RFV10N50BE
Typical Performance Curves
FIGURE 1. SAFE OPERATING AREA CURVE
FIGURE 2. UNCLAMPED INDUCTIVE-SWITCHING
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. NORMALIZED POWER DISSIPATION vs TEMPER-
TURE DERATING CURVE
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
I
D
,
CASE TEMPERATURE (T
C
) = +25
o
C
30
10
1
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
OPERATION IN THIS AREA
MAY BE LIMITED BY r
DS(ON)
1
10
DC 100ms 10ms
1ms
100
μ
s
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
0.01
0.10
1.00
2.00
50.0
I
DM
10.0
5.0
IF R = 0
t
AV
= (L)(I
)/
(1.3 RATED BV
DSS
-V
DD
)
IF R
≠
0
t
AV
= (L/R) In[(I
x R)/
(1.3 RATED BV
DSS
-V
DD
)+1]
STARTING T
J
= +25
o
C
STARTING T
J
= +150
o
C
I
D
,
12
10
8
6
4
2
0
25
35
45
55
65
75
85
95
105 115 125 135 145
T
C
, CASE TEMPERATURE (
o
C)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
P
T
C
, CASE TEMPERATURE (
o
C)
PULSE DURATION = 250
μ
s, T
C
= +25
o
C
0
2.5
5.0
7.5
10.0
12.5
15.0
0
5
10
15
20
25
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
,
V
GS
= 10V
V
GS
= 6.0V
V
GS
= 5.5V
V
GS
= 5V
V
GS
= 4.5V
I
D
,
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
25
20
15
10
5
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0
PULSE TEST
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
+150
o
C
+25
o
C
-40
o
C
V
DD
= 30V
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