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參數(shù)資料
| 型號(hào)： | RFV10N50 |
| 廠商： | Intersil Corporation |
| 英文描述： | 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 10A條的500V，快速切換N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | RFV10N50 |
4
RFV10N50BE
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 11. TYPICAL SWITCHING WAVEFORMS FOR CON-
STANT GATE CURRENT. REFER TO APPLICATION
NOTES AN7254 AND AN7260
FIGURE 12. MAXIMUM NORMALIZED TRANSIENT THERMAL
IMPEDANCE
Typical Performance Curves
(Continued)
PULSE DURATION = 250
μ
s, V
GS
= 10V, I
D
= 10A
r
D
,
T
J
, JUNCTION TEMPERATURE (
o
C)
3.0
2.5
2.0
1.5
1.0
0.5
0
-50
-25
0
25
50
75
100
125
150
V
GS
= V
DS
, I
D
= 250
μ
A
V
G
,
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
1.5
1.0
0.5
0
-50
-25
0
25
50
75
100
125
150
T
I
D
= 250
μ
A
B
D
,
B
T
J
, JUNCTION TEMPERATURE (
o
C)
2.0
1.5
1.0
0.5
0
-50
-25
0
25
50
75
100
125
150
V
GS
= 0V, FREQUENCY (f) = 1MHz
C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
C
ISS
C
OSS
C
RSS
5000
4000
3000
2000
1000
0
0
5
10
15
20
25
500
400
300
100
0
10
8
6
2
0
D
,
G
,
V
DD
= BV
DSS
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
20
I
G(REF)
G(ACT)
80
V
DD
= BV
DSS
200
4
R
L
= 50
I
G(REF)
= 3.25mA
V
GS
= 10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
Z
θ
J
,
t, RECTANGULAR PULSE WIDTH (s)
10
1
0.1
10
-2
10
-3
10
-5
10
-4
10
-3
10
-2
0.1
1
10
DUTY CYCLE, D = t
1
/t
2
T
J
= P
D
x Z
θ
JC
+ T
C
P
D
t
1
t
2
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