參數(shù)資料
型號(hào)： RFV10N50
廠商： Intersil Corporation
英文描述： 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs
中文描述： 10A條的500V，快速切換N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 66K
代理商： RFV10N50
2
Specifications RFV10N50BE
Electrical Specifications
Case Temperature (T
C
) = +25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Drain-Source Breakdown Voltage
BV
DSS
I
D
= 0.25mA, V
GS
= 0V
500
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 0.25mA
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 500V,
V
GS
= 0V
T
C
= +25
o
C
T
C
= +125
o
C
-
-
1
μ
A
-
-
250
μ
A
Gate-Source Leakage Current
I
GSS
V
GS
= +12V, V
GS
= -0.3V
-
-
±
500
nA
On Resistance
r
DS(ON)
I
D
= 10A, V
GS
= 10V
-
-
0.480
Turn-On Time
t
ON
V
DD
= 250V, I
D
= 10A, R
L
= 25
,
V
GS1
= V
GS2
= +10V, R
GS1
= 6.25
,
R
GS2
= 20
-
-
75
ns
Turn-On Delay Time
t
D(ON)
-
20
-
ns
Rise Time
t
R
-
30
-
ns
Turn-Off Delay Time
t
D(OFF)
-
21
-
ns
Fall Time
t
F
-
5
-
ns
Turn-Off Time
t
OFF
-
-
50
ns
Total Gate Charge
Q
G10
V
GS
= 0V to 10V
V
DD
= 400V,
I
D
= 10A,
R
L
= 40
-
145
190
nC
Gate Source Charge
Q
GS
-
17
22
nC
Gate Drain (“Miller”) Charge
Q
GD
-
57
74
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V, f = 1MHz
-
3800
-
pF
Output Capacitance
C
OSS
-
290
-
pF
Reverse Transfer Capacitance
C
RSS
-
75
-
pF
Thermal Resistance
R
θ
JC
Junction to Case
-
-
0.8
o
C/W
Thermal Resistance
R
θ
JA
Junction to Ambient
-
-
40
o
C/W
Control FET Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Static Drain to Source
r
DS(ON)
V
GS
= 10V, I
D
= 1.0A
-
1.6
-
Drain Source Breakdown Voltage
BV
DSS
I
D
= 1.0mA, V
GS
= 0V
14
15
-
V
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 0.25mA
2
-
4
V
Total Gate Charge
Q
G10
I
D
= 1.0A, V
GS
= 10V
-
-
5
nC
Source-Drain Diode Ratings and Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNITS
MIN
TYP
MAX
Continuous Source Current
I
S
-
-
10
A
Pulsed Source Current
I
SM
-
-
25
A
Forward Voltage
V
SD
I
SD
= 10A, V
GS
= 0V
-
-
1.4
V
Reverse Recovery Time
t
RR
I
SD
= 10A, V
GS
= 0V, dI
SD
/dt = 100A/
μ
s
-
-
750
ns
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