參數(shù)資料
型號(hào)： QSZ1
廠商： Rohm CO.,LTD.
英文描述： General purpose transistor
中文描述： 通用晶體管
文件頁(yè)數(shù)： 2/5頁(yè)
文件大小： 91K
代理商： QSZ1
QSZ1
Transistors
z
Absolute maximum ratings
(Ta=25
°
C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
2/4
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
15
12
6
2
4
500
1.25
0.9
V
V
V
A
A
°
C
°
C
150
55 to
+
150
Symbol
Limits
Unit
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1
Single pulse Pw=1ms.
2
Each terminal mounted on a recommended land.
3
Mounted on a 25mm 25mm
t
0.8mm ceramic substrate.
Tr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
mW/Total
W/Total
W/Element
3
1
2
3
+
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
2
4
500
1.25
0.9
150
55 to
+
150
Unit
V
V
V
A
A
°
C
°
C
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1
Single pulse Pw=1ms.
2
Each terminal mounted on a recommended land.
3
Mounted on a 25mm 25mm
t
0.8mm ceramic substrate.
z
Electrical characteristics
(Ta=25
°
C)
Tr1
Parameter
mW/Total
W/Total
3
W/Element
3
1
2
+
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
15
12
6
270
120
15
100
100
180
680
V
V
V
nA
nA
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
1mA, I
B
=
50mA
V
CE
=
2V, I
C
=
200mA
V
CE
=
2V, I
E
=
200mA, f
=
100MHz
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
mV
360
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown viltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collerctor-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Pulsed
Tr2
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
15
12
6
270
Typ.
90
Max.
100
100
180
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
360
20
MHz
pF
V
CE
=
2V, I
E
=
200mA, f
=
100MHz
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
1A, I
B
=
50mA
V
CE
=
2V, I
C
=
200mA
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
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參數(shù)描述
QSZ1TR 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN PNP 12V 2A 5PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
QSZ2 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor
QSZ2TR 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN PNP 30V 1.5A 5PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
QSZ3 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor (isolated transistor and diode)
QSZ3TR 功能描述:兩極晶體管 - BJT TRANS GP BJT NPN PNP 12V 3A 5PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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