參數(shù)資料
型號: PZT751T1G
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: PNP Silicon Planar Epitaxial Transistor
中文描述: 2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-261AA
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 127K
代理商: PZT751T1G
PZT751T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector
Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60
Vdc
Collector
Emitter Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
80
Vdc
Emitter
Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
Base
Emitter Cutoff Current
(V
EB
= 4.0 Vdc)
I
EBO
0.1
Adc
Collector
Base Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
100
nAdc
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 2.0 Vdc)
h
FE
75
75
75
40
Collector
Emitter Saturation Voltages
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
CE(sat)
0.5
0.3
Vdc
Base
Emitter Voltages
(I
C
= 1.0 Adc, V
CE
= 2.0 Vdc)
V
BE(on)
1.0
Vdc
Base
Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
V
BE(sat)
1.2
Vdc
Current
Gain
Bandwidth
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width
300 s, Duty Cycle = 2.0%.
f
T
75
MHz
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