參數(shù)資料
型號: PZT2907A
廠商: ON SEMICONDUCTOR
英文描述: PNP SILICON TRANSISTOR SURFACE MOUNT
中文描述: 進(jìn)步黨硅晶體管表面貼裝
文件頁數(shù): 2/6頁
文件大?。?/td> 139K
代理商: PZT2907A
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(2)
Symbol
Min
Typ
Max
Unit
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc)
(IC = –500 mAdc, VCE = –10 Vdc)
hFE
75
100
100
100
50
300
Collector-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = – 500 mAdc, IB = –50 mAdc)
VCE(sat)
–0.4
–1.6
Vdc
Base-Emitter Saturation Voltages
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
DYNAMIC CHARACTERISTICS
VBE(sat)
–1.3
–2.6
Vdc
Current-Gain — Bandwidth Product (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING TIMES
fT
Cc
Ce
200
MHz
8.0
pF
30
pF
Turn-On Time
IB1 = –15 mAdc)
ton
45
ns
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
td
tr
toff
ts
tf
10
Rise Time
40
Turn-Off Time
IB1 = IB2 = –15 mAdc)
100
ns
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
80
Fall Time
30
2. Pulse Test: Pulse Width
300
μ
s, Duty Cycle = 2.0%.
Figure 1. Delay and Rise
Time Test Circuit
Figure 2. Storage and Fall
Time Test Circuit
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME
2.0 ns
0
1.0 k
50
– 16 V
200 ns
– 30 V
200
TO OSCILLOSCOPE
RISE TIME
5.0 ns
0
1.0 k
50
– 30 V
200 ns
– 6.0 V
37
TO OSCILLOSCOPE
RISE TIME
5.0 ns
+15 V
1.0 k
1N916
INPUT
Zo = 50
PRF = 150 Hz
RISE TIME
2.0 ns
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