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參數(shù)資料
| 型號： | PZT2222AT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Planar Epitaxial Transistor(NPN型外延晶體管) |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | PZT2222AT1 |
PZT2222AT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
40
Vdc
Collector-Base Breakdown Voltage (I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
°
75
°
Vdc
Emitter-Base Breakdown Voltage (I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
6.0
Vdc
Base-Emitter Cutoff Current (V
CE
= 60 Vdc, V
BE
= 3.0 Vdc)
I
BEX
20
nAdc
Collector-Emitter Cutoff Current (V
CE
= 60 Vdc, V
BE
= 3.0 Vdc)
I
CEX
10
nAdc
Emitter-Base Cutoff Current (V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
100
nAdc
Collector-Base Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125
°
C)
I
CBO
10
10
nAdc
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc, T
A
= 55
°
C)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
h
FE
35
50
70
35
100
50
40
300
Collector-Emitter Saturation Voltages
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
0.3
1.0
Vdc
Base-Emitter Saturation Voltages
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
1.2
2.0
Vdc
Input Impedance
°
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
°
h
ie
°
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
re
8.0x10
-4
4.0x10
-4
Small-Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
fe
50
75
300
375
Output Admittance
°
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
°
h
oe
°
5.0
25
35
200
mhos
Noise Figure (V
CE
= 10 Vdc, I
C
= 100 Adc, f = 1.0 kHz)
F
4.0
dB
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
c
8.0
pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
e
25
pF
SWITCHING TIMES
(T
A
= 25
°
C)
Delay Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B(on)
= 15 mAdc, V
EB(off)
= 0.5 Vdc)
Figure 1
)
= 15 mAdc V
EB( ff)
= 0 5 Vdc)
t
d
10
ns
Rise Time
t
r
25
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B(on)
= I
B(off)
= 15 mAdc)
Figure 2
)
B( ff)
t
s
225
ns
Fall Time
t
f
60
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT2222AT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon Planar Epitaxial Transistor |
| PZT2222AT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON TRANSISTOR SURFACE MOUNT |
| PZT2222AT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2222AT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| PZT2222AT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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