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參數(shù)資料
| 型號： | PZT2222AT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Planar Epitaxial Transistor(NPN型外延晶體管) |
| 中文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261AA |
| 封裝： | CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | PZT2222AT1 |
Semiconductor Components Industries, LLC, 2005
April, 2005 Rev. 5
1
Publication Order Number:
PZT2222AT1/D
PZT2222AT1
Preferred Device
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
PNP Complement is PZT2907AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
Available in 12 mm tape and reel
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
40
Vdc
Collector-Base Voltage
V
CBO
75
Vdc
Emitter-Base Voltage
(Open Collector)
V
EBO
6.0
Vdc
Collector Current
I
C
600
mAdc
Total Power Dissipation
up to T
A
= 25
°
C (Note 1)
P
D
1.5
W
Storage Temperature Range
°
T
stg
65 to +150
°
C
Junction Temperature
°
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches
2
.
THERMAL CHARACTERISTICS
T
J
150
°
C
Rating
Symbol
Value
Unit
Thermal Resistance,
JunctiontoAmbient
R
JA
83.3
°
C/W
Lead Temperature for Soldering,
0.0625
″
from case
Time in Solder Bath
T
L
260
10
°
C
Sec
http://onsemi.com
MARKING DIAGRAM
SOT223 (TO261)
CASE 318E04
STYLE 1
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
PZT2222AT1
SOT223
3000 Tape & Reel
PZT2222AT1G
SOT223
(PbFree)
SOT223
3000 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
WW
= Assembly Location
= Work Week
BASE
1
COLLECTOR
2, 4
3
EMITTER
1
2
3
4
SOT223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
PZT2222AT3
10,000 Tape & Reel
PZT2222AT3G
SOT223
(PbFree)
10,000 Tape & Reel
AWW
P1F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PZT2222AT1 | SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT |
| PZT2222 | NPN Silicon Switching Transistors |
| PZT2222A | NPN Silicon Switching Transistors |
| PZT2907AT1 | PNP Silicon Epitaxial Transistor(PNP型外延晶體管) |
| PZT2907A | PNP SILICON TRANSISTOR SURFACE MOUNT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZT2222AT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Silicon Planar Epitaxial Transistor |
| PZT2222AT1D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN SILICON TRANSISTOR SURFACE MOUNT |
| PZT2222AT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZT2222AT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| PZT2222AT1H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
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