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參數(shù)資料
| 型號(hào)： | PTPS65910A1RSL |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 電源管理 |
| 英文描述： | POWER SUPPLY SUPPORT CKT, PQCC48 |
| 封裝： | 6 X 6 MM, 1 MM HEIGHT, GREEN, PLASTIC,VQFN-48 |
| 文件頁(yè)數(shù)： | 27/89頁(yè) |
| 文件大小： | 941K |
| 代理商： | PTPS65910A1RSL |
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PRODUCTPREVIEW
SWCS046-022
VCC7
VIO
INT1
1.8V
Td32KON
NRESPWON
TdSONT
Switch On sequence
Intterupt aknowledge
PWRHOLD
VMBHI_IT=1
TdONVMBHI
CLK33KOUT
VMBCH threshold
VMBHI threshold
VRTC
1.8V
TdbVMBHI
VMBDCH threshold
VMBLO threshold
VBNPR threshold
TdbVMBDCH
TdbVMBLO
Switch Off sequence
VBACKUP > VBNPR
www.ti.com
SWCS046C – MARCH 2010 – REVISED JUNE 2010
POWER CONTROL TIMING (continued)
Table 6. Power Control Timing Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tdbPWRONF: PWRON falling-edge debouncing delay
500
550
s
3 ×
4 ×
tdbPWRONR: PWRON rising-edge debouncing delay
tCK32k
tCK32k =
s
= 94
125
2 ×
3 ×
tdbPWRHOLD: PWRON rising-edge debouncing delay
tCK32k
tCK32k=
s
= 63
94
tdOINT: INT1 (internal) Power-on pulse duration after
1
s
PWRON low-level (debounced) event
tdONPWHOLD: delay to set high PWRHOLD signal or
DEV_ON control bit after NRESPWON released to
984
ms
keep on the supplies
tdPWRONLP: PWRON long-press delay (disabling
PWON falling edge to
6
s
power-on condition) to INT1 falling edge
INT1 falling edge
tdPWRONLPTO: PWROW long-press interrupt
INT1 falling edge to
2
s
(PWRON_LP_IT) to supplies switch-off
NRESPWON falling edge
Device turn-on with rising input voltage
Figure 6. Device Turn-On/Off with Rising/Falling Input Voltage
Note: The DEV_ON control bit can be used instead of the PWRHOLD signal to maintain supplies on after the
switch-on sequence.
Table 7. Device Turn-on/off with Rising/Falling Input Voltage, Timing Characteristics
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BOOT[1:0] = 00, RC oscillator
0.1
td32KON: 32-kHz oscillator turn on time
BOOT[1:0] = 01, quartz oscillator
200
ms
BOOT[1:0] = 01, bypass clock
0.1
3 × tCK32k
4 × tCK32k
tdbVMBHI: VMBHI rising-edge debouncing delay
s
= 94
= 125
tdOINT: INT1 Power On pulse duration after VMBHI
1
s
high-level (debounced) event
Copyright 2010, Texas Instruments Incorporated
33
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