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參數(shù)資料
| 型號： | PTB20146 |
| 廠商： | ERICSSON |
| 英文描述： | 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| 中文描述： | 0.4瓦特，1.8-2.0千兆赫蜂窩無線射頻功率晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | PTB20146 |
e
1
0.0
0.2
0.4
0.6
0.8
1.0
0.00
0.02
0.04
0.06
0.08
0.10
Input Power (Watts)
O
Typical Output Power vs. Input Power
V
CC
= 26 V
I
CQ
= 140 mA
f = 2.0 GHz
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
50
Vdc
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
0.5
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
5.4
0.031
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
32.3
°C/W
PTB 20146
0.4 Watt, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20146 is a class A, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
0.4 Watt, 1.8–2.0 GHz
Class A Characteristics
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Package 20208
20146
LOTCODE
9/28/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20147 | 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20148 | 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20151 | 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
| PTB20155 | 9 Watts, 610-960 MHz UHF Power Transistor |
| PTB20156 | 8 Watts, 1350-1850 MHz Microwave Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20147 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20148 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20149 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20151 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
| PTB20155 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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