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參數(shù)資料
| 型號： | PTB20156 |
| 廠商： | ERICSSON |
| 英文描述： | 8 Watts, 1350-1850 MHz Microwave Power Transistor |
| 中文描述： | 8瓦，1350至1850年兆赫微波功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 43K |
| 代理商： | PTB20156 |
e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
2.0
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
52
0.29
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
3.4
°C/W
Typical Gain & Return Loss vs. Frequency
(as measured in a broadband circuit)
0
2
4
6
8
10
1.3
1.4
1.5
Frequency (GHz)
1.6
1.7
1.8
1.9
G
-15
-12
-9
-6
-3
0
R
V
CC
= 22 V
Pin = 2.0 W
Return Loss (dB)
Gain (dB)
PTB 20156
8 Watts, 1350–1850 MHz
Microwave Power Transistor
20156
LOTCODE
Description
The 20156 is an NPN, common base RF power transistor intended
for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Specified 22 Volts
Class C Characteristics
Output Power: 8 Watts
Gain: 6.0 dB Min. at 8 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20209
9/28/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20157 | 20 Watts, 1.35-1.85 GHz RF Power Transistor |
| PTB20162 | 40 Watts, 470-900 MHz RF Power Transistor |
| PTB20166 | 23 Watts, 675-925 MHz Common Base RF Power Transistor |
| PTB20167 | 60 Watts, 850-960 MHz RF Power Transistor |
| PTB20170 | 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20157 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20158 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20162 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:40 Watts, 470-900 MHz RF Power Transistor |
| PTB20166 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:23 Watts, 675-925 MHz Common Base RF Power Transistor |
| PTB20167 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 850-960 MHz RF Power Transistor |
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