參數(shù)資料
型號(hào): PTB20148
廠商: ERICSSON
英文描述: 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor
中文描述: 60瓦,925-960兆赫蜂窩無(wú)線電射頻功率晶體管
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 46K
代理商: PTB20148
e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
40
Vdc
Collector-Base Voltage
V
CBO
65
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
8.0
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
145
0.83
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
1.2
°C/W
Gain vs. Frequency
(as measured in a broadband circuit)
8
9
10
11
12
920
925
930
935
Frequency (MHz)
940
945
950
955
960
965
G
V
CC
= 25 V
I
CQ
= 200 mA
Pout = 60 W
PTB 20148
60 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20148 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
60 Watts, 925–960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 60 Watts
Gold Metallization
Silicon Nitride Passivated
Package 20200
20148
LOT CODE
9/28/98
相關(guān)PDF資料
PDF描述
PTB20151 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor
PTB20155 9 Watts, 610-960 MHz UHF Power Transistor
PTB20156 8 Watts, 1350-1850 MHz Microwave Power Transistor
PTB20157 20 Watts, 1.35-1.85 GHz RF Power Transistor
PTB20162 40 Watts, 470-900 MHz RF Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTB20149 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20151 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor
PTB20155 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20156 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20157 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel