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參數(shù)資料
| 型號： | PTB20145 |
| 廠商： | ERICSSON |
| 英文描述： | 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor |
| 中文描述： | 9瓦，915-960兆赫蜂窩無線電射頻功率晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 41K |
| 代理商： | PTB20145 |
e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
V
CER
55
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage (collector open)
V
EBO
4.0
Vdc
Collector Current (continuous)
I
C
2.6
Adc
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
33
0.19
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
θ
JC
5.3
°C/W
Typical Output Power vs. Input Power
0
2
4
6
8
10
12
0.00
0.25
0.50
0.75
1.00
1.25
Input Power (Watts)
O
V
CC
= 25V
I
CQ
= 50 mA
f = 960 MHz
PTB 20145
9 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20145 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
9 Watts, 915–960 MHz
Class AB Characteristics
50% Min Collector Efficiency at 9 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Package 20208
20145
LOTCODE
9/28/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTB20146 | 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20147 | 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor |
| PTB20148 | 60 Watts, 925-960 MHz Cellular Radio RF Power Transistor |
| PTB20151 | 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
| PTB20155 | 9 Watts, 610-960 MHz UHF Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTB20146 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20147 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20148 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20149 | 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTB20151 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor |
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