參數(shù)資料
型號(hào): PTB20134
廠商: ERICSSON
英文描述: 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor
中文描述: 30瓦,860-900兆赫蜂窩無(wú)線電射頻功率晶體管
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 42K
代理商: PTB20134
PTB 20134
2
e
7
8
9
10
11
12
13
850
860
870
880
890
900
910
Frequency (MHz)
G
20
30
40
50
60
70
80
E
V
CC
= 25 V
I
CQ
= 100 mA
P
OUT
= 30 W
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
Efficiency (%)
Gain (dB)
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
I
B
= 0 A, I
C
= 100 mA
V
(BR)CEO
25
30
Volts
Breakdown Voltage C to E
V
BE
= 0 V, I
C
= 100 mA
V
(BR)CES
55
70
Volts
Breakdown Voltage E to B
I
C
= 0 A, I
E
= 5 mA
V
(BR)EBO
3.5
5
Volts
DC Current Gain
V
CE
= 5 V, I
C
= 1 A
h
FE
20
50
100
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA, f = 900 MHz)
Collector Efficiency
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA, f = 900 MHz)
Intermodulation Distortion
(V
CC
= 25 Vdc, Pout = 30 W(PEP), I
CQ
= 100 mA,
f = 900 MHz,
f = 1 MHz)
G
pe
8
9.5
dB
η
C
50
%
IMD
-30
dBc
Load Mismatch Tolerance
(V
CC
= 25 Vdc, Pout = 30 W, I
CQ
= 100 mA,
f = 900 MHz—all phase angles at frequency of test)
Ψ
30:1
Typical Performance
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change
without notice.
LF
Ericsson Components AB 1995
EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
相關(guān)PDF資料
PDF描述
PTB20141 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
PTB20144 6 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20145 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor
PTB20146 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor
PTB20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTB20135 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:85 Watts, 925-960 MHz Cellular Radio RF Power Transistor
PTB20141 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20144 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20145 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
PTB20146 功能描述:射頻放大器 RF Bipolar Trans RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel