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參數(shù)資料
| 型號： | PNZ121S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 44K |
| 代理商： | PNZ121S |
1
PNZ121S
Silicon NPN Phototransistor
For optical control systems
Features
Stable operations in high illuminance region
Low dark current
Fast response : t
r
= 1
μ
s (typ.)
Small size ( 3) ceramic package
Phototransistors
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
20
5
10
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)*3
λ
P
θ
t
r*2
t
f*2
Conditions
min
typ
1
max
100
280
Unit
nA
μ
A
nm
deg.
μ
s
μ
s
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
V
CE
= 10V
V
CE
= 10V, L = 1000 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
120
800
30
1
1.3
V
CC
= 10V, I
CE(L)
= 1mA, R
L
= 100
3.0
±
0.2
0.45
±
0.05
0.3
±
0.05
0.9
±
0.15
4
±
0
2
±
0
1
1
2
Unit : mm
1: Emitter
2: Collector
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
*3
I
CE(L)
Classifications
Class
I
CE(L)
(
μ
A)
Color indication
Q
R
S
T
120 to180
160 to 200
180 to 235
210 to 280
Black
Red
Green
—
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PNZ121S(PN121S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:光デバイス － 受光素子 － フォトトランジスタ |
| PNZ121S0R | 功能描述:TRANSISTOR PHOTO NPN 800NM T-1 RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學 - 光電檢測器 - 光電晶體管 系列:* 標準包裝:1,200 系列:- 電壓 - 集電極發(fā)射極擊穿（最大）:30V 電流 - 集電極 (Ic)（最大）:1mA 電流 - 暗 (Id)（最大）:100nA 波長:880nm 視角:24° 功率 - 最大:100mW 安裝類型:通孔 方向:頂視圖 封裝/外殼:徑向 |
| PNZ121SQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 10M | DOME-3.0 |
| PNZ121SR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 10M | DOME-3.0 |
| PNZ121SS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 10M | DOME-3.0 |
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