參數(shù)資料
型號(hào): PNZ150
廠商: PANASONIC CORP
元件分類: 光敏三極管
英文描述: Silicon planar type For optical control systems
中文描述: PHOTO TRANSISTOR DETECTOR
封裝: PLASTIC, LSTLR102-003, 2 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大?。?/td> 103K
代理商: PNZ150
Phototransistors
PNZ150
(PN150)
Silicon planar type
1
Publication date: April 2004
SHE00018BED
For optical control systems
Features
High sensitivity
Wide spectral sensitivity characteristics, suited for detecting GaAs
LEDs
Low dark current
Side-view plastic mold type package
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
V
CEO
20
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
T
opr
100
mW
Operating ambient temperature
25 to
+
85
30 to
+
100
°
C
°
C
Storage temperature
T
stg
1: Emitter
2: Collector
LSTLR102-003 Package
(Input pulse)
(Output pulse)
50
R
L
t
r
: Rise time
t
f
:
Fall time
V
CC
Sig. out
10%
90%
Sig. in
t
r
t
f
Note) The part number in the parenthesis shows conventional part number.
(2.3)
(1.9)
4.5
±0.3
(2.54)
(1.2)
4.2
±0.3
φ
3.5
±0.2
4
±
(
(
1
1
(
(
0.45
±0.15
2-0.45
±0.15
2-0.98
±0.2
(R1.75)
N
1
2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be dis regarded radiation.
4.*1: Source: Tungsten (color temperature 2
856 K)
*2: Switching time measurement circuit
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Photocurrent
*1
I
CE(L)
V
CE
=
10 V, L
=
500 lx
V
CE
=
10 V
V
CE
=
10 V
The angle from which photocurrent
becomes 50%
1.0
3.0
mA
Dark current
I
CEO
λ
p
θ
0.01
1.00
μ
A
Peak emission wavelength
800
nm
°
Half-power angle
35
Rise time
*2
Fall time
*2
Collector-emitter saturation voltage
*1
t
r
V
CC
=
10 V, I
CE(L)
=
5 mA, R
L
=
100
4
μ
s
μ
s
t
f
4
V
CE(sat)
I
CE(L)
=
1 mA, L
=
1
000 lx
0.2
0.5
V
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
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