
Phototransistors
PNZ120S
(PN120S)
Silicon planar type
1
Publication date: April 2004
SHE00014BED
For optical control systems
■
Features
High sensitivity
Wide directivity characteristics for easy use
Fast response: t
r
, t
f
=
3
μ
s (typ.)
Signal mixing capability using base pin
Small size (
φ
3) ceramic package
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-emitter voltage (Base open)
V
CEO
V
ECO
30
V
Emitter-collector voltage (Base open)
5
V
Collector current
I
C
20
mA
Collector power dissipation
P
C
T
opr
50
mW
Operating ambient temperature
25 to
+
85
30 to
+
100
°
C
°
C
Storage temperature
T
stg
1: Collector
2: Emitter
CTRLR102-001 Package
50
R
L
V
CC
Sig. out
10%
90%
Sig. in
t
r
t
f
(Input pulse)
(Output pulse)
t
r
: Rise time
t
f
:
Fall time
Note) The part number in the parenthesis shows conventional part number.
φ
3.0
±0.15
φ
0.45
±0.05
φ
0.3
±0.05
0.9
±0.15
3
±
2
±
1
2
1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
5.*1: Source: Tungsten (color temperature 2
856 K)
*2: Rank classification
*3: Switching time measurement circuit
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Photocurrent
*1, *2
I
CE(L)1
V
CE
=
10 V, L
=
2 lx
V
CE
=
10 V, L
=
500 lx
V
CE
=
10 V
V
CE
=
10 V
The angle from which photocurrent
becomes 50%
3
μ
A
I
CE(L)2
1.0
mA
Dark current
I
CEO
λ
p
θ
5
500
nA
Peak emission wavelength
800
nm
°
Half-power angle
50
Rise time
*3
Fall time
*3
Collector-emitter saturation voltage
*1
t
r
V
CC
=
10 V, I
CE(L)
=
5 mA, R
L
=
100
3
μ
s
μ
s
t
f
3
V
CE(sat)
I
CE(L)
=
1 mA, L
=
1
000 lx
0.2
0.5
V
■
Electrical-Optical Characteristics
T
a
=
25
°
C
±
3
°
C
Rank
QL
RL
SL
Q
R
S
I
CE(L)1
I
CE(L)2
3 to 16
10 to 30
>
24
>
7.0
5 typ.
6 typ.
8 typ.
1.0 to 5.0
4.0 to 9.0