參數(shù)資料
型號(hào): PNZ109L
廠商: PANASONIC CORP
元件分類: 光敏三極管
英文描述: Silicon NPN Phototransistor
中文描述: PHOTO TRANSISTOR DETECTOR
封裝: MTGLR103-001, 3 PIN
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 46K
代理商: PNZ109L
1
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
T
opr
T
stg
Ratings
20
30
3
5
30
150
–25 to +85
–30 to +100
Unit
V
V
V
V
mA
mW
C
C
Collector to emitter voltage
Collector to base voltage
Emitter to collector voltage
Emitter to base voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
PNZ109L
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity : I
CE(L)
= 3.5 mA (min.) (at L = 100 lx)
Built-in filter to cutoff visible light for reducing ambient light noise
Peak sensitivity wavelength matched with infrared light emitting
devices :
λ
p
= 900 nm (typ.)
Fast response : t
r
= 5
μ
s (typ.)
Long lifetime, high reliability
Phototransistors
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
t
d
t
r
t
f
Glass lens
6
±
0
1: Emitter
2: Base
2: Collector
Unit : mm
10
±
02
10
±
015
4.6
±
0.15
2.54
±
0.25
5.75 max.
3-0.45
±
0.05
1
4
±
3
1
2
3
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)
λ
P
θ
t
r*2
t
f*2
V
CE(sat)
Conditions
min
typ
0.05
max
2
Unit
μ
A
mA
nm
deg.
μ
s
μ
s
V
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
Rise time
Fall time
Collector saturation voltage
V
CE
= 10V
V
CE
= 10V, L = 100 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA
R
L
= 100
I
CE(L)
= 1mA, L = 500 lx
*1
3.5
900
10
5
6
0.3
0.6
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
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