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參數(shù)資料
| 型號： | PMWD22XN |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Dual N-channel uTrenchMOS extremely low level FET |
| 中文描述： | 9.2 A, 20 V, 0.024 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA |
| 封裝： | PLASTIC, TSSOP-8 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 79K |
| 代理商： | PMWD22XN |
9397 750 15093
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
5 of 12
Philips Semiconductors
PMWD22XN
Dual N-channel
μ
TrenchMOS extremely low level FET
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol
Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
; see
Figure 9
and
10
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
55
°
C
V
DS
= 20 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
=
±
12 V; V
DS
= 0 V
f = 1 MHz
V
GS
= 4.5 V; I
D
= 4 A; see
Figure 6
and
8
T
j
= 25
°
C
T
j
= 150
°
C
V
GS
= 2.5 V; I
D
= 3 A; see
Figure 6
and
8
V
GS
= 10 V; I
D
= 4.2 A; see
Figure 8
V
GS
= 4.5 V; I
D
= 4 A
20
18
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
0.5
0.35
-
1
-
-
1.5
-
1.8
V
V
V
I
DSS
drain leakage current
-
-
-
-
-
-
-
1.3
1
100
100
-
μ
A
μ
A
nA
I
GSS
R
G
R
DSon
gate leakage current
gate resistance
drain-source on-state resistance
-
-
-
21
35.7
27
26
42
35
m
m
m
-
-
19
36
24
-
m
m
R
S1S2on
Dynamic characteristics
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain voltage
source1-source2 on-state resistance
I
D
= 4 A; V
DS
= 10 V; V
GS
= 4.5 V; see
Figure 11
-
-
-
-
-
-
-
-
-
-
8.4
1.35
2.7
535
185
110
11
19
30
23
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 16 V; f = 1 MHz; see
Figure 13
V
DS
= 10 V; R
L
= 10
; V
GS
= 4.5 V;
R
G
= 6
I
S
= 2 A; V
GS
= 0 V; see
Figure 12
-
0.75
1.2
V
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