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參數(shù)資料
| 型號(hào)： | PMEH2010AEH |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Low VCEsat (BISS) transistors |
| 中文描述： | 低VCEsat(BISS)型晶體管 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大?。?/td> | 641K |
| 代理商： | PMEH2010AEH |
8
Integrated discrete MOSFET drivers combine several discrete products into one package to offer MOSFET
driving functionality. With a choice of configurations Philips offers solutions to take load from the driving circuit,
improve the efficiency of the MOSFET and enable design flexibility.
Key features
- Complete MOSFET driving functionality in
one package
- Several configurations available
MOSFET drivers
Key benefits
- Improved MOSFET efficiency by
Minimizing rise and fall time
Fast gate (dis-)charge of the driven
MOSFET
- Takes load from the driving circuit
and thus minimizes the IC power dissipation
- More design flexibility: the control IC and
the MOSFET do not have to be placed as
close as possible anymore
- Cost-effective alternative to IC-solutions
Key applications
- MOSFET driver
- Bipolar power transistor driver
- Push-pull driver
SOT457 (SC-74)
SOT346 (SC-59A)
SOT457 (SC-74)
SOT457 (SC-74)
Configuration
bra837
Tr1
Tr3
D1
Tr2
1
6
4
5
2
3
bra838
250 mW
3
1
2
Tr1
D1
bra83
9
3
1
2
D1
Tr1
D1
R2
R1
Rext
Tr2
Tr1
6
1
2
4, 5
3
bra840
Tr1
Tr2
4
1
2, 3
5, 6
bra841
P
tot
max.
Contains
600 mW
600 mW
600 mW
I
C
(A)
I
CM
(A)
PMD9050D
PMD4001K (NPN)
PMD5001K (PNP)
PMD4002K (NPN)
PMD5002K (PNP)
R1 = R2 (k
Ω
)
-
2.2
4.7
10
PMD9010D
PMD9001D
PMD9002D
PMD9003D
PMD2001D
General purpose transistors
0.1
0.2
Switching transistors -
reduced storage time
Low V
CEsat
(BISS) transistors -
Low V
CEsat
, high h
FE
and I
C
0.6
1.2
1.0
2.0
PMD4003K (NPN)
PMD5003K (PNP)
PMD3001D
Release mid 2006
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMEM1505NG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505NG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505NG,115 | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505PG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505PG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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