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參數(shù)資料
| 型號(hào)： | PMEH2010AEH |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Low VCEsat (BISS) transistors |
| 中文描述： | 低VCEsat(BISS)型晶體管 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 641K |
| 代理商： | PMEH2010AEH |
7
Matched pair transistors are double transistors with matched current gain
h
FE1
/h
FE2
and matched base-emitter voltage V
BE1
- V
BE2
. The optimal product for the
most common applications is offered by means of several matching-categories
and different pinning options. Internally the transistors are fully isolated.
Key features
- Current gain matching:
h
FE1
/h
FE2
= 0.7, 0.9, 0.95, 0.98
- Base-emitter voltage matching:
V
BE1
- V
BE2
= 2 mV
- Standard double transistor pin-out for
BCM-types
- Application optimized pin-out for all
PMP-types
- Common emitter configuration for
5pin PMP-types
Matched pair transistors
SOT143B
SOT457 (SC-74) SOT353 (SC-88A) SOT363 (SC-88)
P
tot
max.
Polarity
250 mW
380 mW
300 mW
300 mW
I
C
(mA)
V
CEO
(V)
30
h
FE
min.
110
h
FE
max.
800
h
FE1
/h
FE2
0.7
0.9
0.9
0.95
0.98
0.7
0.9
0.9
0.95
0.98
V
BE1
- V
BE2
(mV)
n.a.
2
2
2
2
n.a.
2
2
2
2
NPN
100
BCV61/A/B/C
BCM61B
45
200
450
BCM847DS
BCM847BS
PMP4501Y
PMP4201Y
PMP4501G
PMP4201G
PNP
100
30
110
800
BCV62/A/B/C
BCM62B
45
200
450
BCM857DS
BCM857BS
PMP5501Y
PMP5201Y
PMP5501G
PMP5201G
Key benefits
- Improved performance of current mirror
and differential amplifier circuits
- Drop-in replacement for standard double
transistors (BCM-series)
- Simplified board layout (PMP-series)
- Eliminates need for costly
additional trimming
Key applications
- Current mirror e.g. for current
measurement or to drive LED’s with a
constant current
- Differential amplifier e.g. sensor
signal amplification
- Comparator e.g. for DC/DC converters
Vout
Vin
Rsense
Vsense
MSE265
Current sensor using
matched pairs
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMEM1505NG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505NG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505NG,115 | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505PG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505PG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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