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參數(shù)資料
| 型號(hào)： | PMEH2010AEH |
| 廠(chǎng)商： | NXP Semiconductors N.V. |
| 英文描述： | Low VCEsat (BISS) transistors |
| 中文描述： | 低VCEsat(BISS)型晶體管 |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 641K |
| 代理商： | PMEH2010AEH |
10
With their optimized diode structure, Philips’ ESD protection diodes offer a superior size / performance ratio
with outstanding ESD protection of automotive electronics. A wide portfolio is available for protection of all
interfaces in automotive electronics; from general line-protection for engine/body -controllers up to specific
devices for protection of USB-interfaces or antenna-inputs in car entertainment applications.
ESD protection diodes
Number of lines
SOT23
SOD323 (SC-76)
uni-
bi-
I
RM
max. @ V
RWM
μA
Configuration
directional
V
C max. pF
P
PP
max. W
bra526
15 V
24 V
1
2
1
0.05
15
13
160
PESD1LIN
0.05
24
mse213
1
2
3
2
0.05
24
17
200
PESD1CAN
bra004
1
2
3
2
1
1
5
200
260
PESD5V0S2UAT
2
1
0.05
12
75
180
PESD12VS2UAT
2
1
0.05
24
50
160
PESD24VS2UAT
mse212
1
2
3
2
1
1
5.25
200
260
PESD5V2S2UT
2
1
1
12
75
180
PESD12VS2UT
2
1
1
24
50
160
PESD24VS2UT
mse211
1
2
1
1
5
65
500
PESD5V0L1BA
1
0.05
12
13
200
PESD12VL1BA
1
0.05
24
9
200
PESD24VL1BA
Key features
- Excellent ESD clamping performance
- Ultra low leakage current
- Low device capacitance
- ESD protection up to 30 kV
- EC 61000-4-2, level 4 compliant (8 kV
contact, 15 kV air discharge)
Key benefits
- Optimized diode structure for best-in-class
ESD protection of today’s sensitive
car electronics
- Low clamping voltages and fast response
times ensure optimal protection
- Ultra low leakage current helps to reduce
overall power consumption
- Low device capacitance keeps unwanted
disturbances in the circuits to a minimum
Key applications
- Data and audio interfaces,
e.g. car multimedia line protection
- Overvoltage protection,
e.g. airbag controllers
- Car drivers interface protection,
e.g. dashboard panels
- CAN and LIN bus protection
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMEM1505NG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505NG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505NG,115 | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505PG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505PG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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