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參數(shù)資料
| 型號(hào)： | PMEH2010AEH |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Low VCEsat (BISS) transistors |
| 中文描述： | 低VCEsat(BISS)型晶體管 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 641K |
| 代理商： | PMEH2010AEH |
6
Combining a BISS transistor with a RET BISS Loadswitches provide full
miniature loadswitch functionality in a single package and deliver
best-in-class performance.
Key features
- BISS transistor and RET in one package
- Low “threshold” voltage (< 1 V) compared
to MOSFET
- Small drive power required
- Best-in-class performance for loadswitches
- Available for switching loads of 0.5 – 1 A
BISS Loadswitches
SOT457 (SC-74)
SOT363 (SC-88)
I
C
(A)
V
CEO
(V)
V
CEsat
(mV)
@ 500 mA
R1 = R2 (k
Ω
)
0.5
40
350
2.2
4.7
10
22
47
2.2
4.7
10
22
47
2.2
4.7
10
22
47
PBLS4001D
PBLS4002D
PBLS4003D
PBLS4004D
PBLS4005D
PBLS6001D
PBLS6002D
PBLS6003D
PBLS6004D
PBLS6005D
PBLS4001Y
PBLS4002Y
PBLS4003Y
PBLS4004Y
PBLS4005Y
1.0
40
170
60
180
Key benefits
- Integrated on-the-shelve solution for
switching loads
Saves design and sourcing costs
Reduction in boardspace requirements
ust one or two external resistors needed
for full loadswitch capability
- Combination of low voltage drop and low
base drive current
BISS transistor in the power path provides
the lowest energy-losses
RET in the control path provides a low
base drive current
Key applications
- Supply line switches, e.g. in control units
- Control of lamps, motors and switches,
e.g. instrument clusters
- High side switches for drivers
MSE336
Tr1
Low VCEsat
(BISS)
Tr2
(RET)
R1
R2
GND
Control
input
Power
supply
Load
Loadswitch
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PMEM1505NG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505NG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505NG,115 | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM1505PG | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-353 |
| PMEM1505PG T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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