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參數(shù)資料
| 型號(hào)： | PM50CTJ060-3 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | INSULATED PACKAGE FLAT-BASE TYPE |
| 中文描述： | 絕緣包裝平性基地型 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 100K |
| 代理商： | PM50CTJ060-3 |
Mar. 2001
V
D1
V
D2
V
D3
560
V
UP1
V
CC
GND
OUT
GND
In
P
U
V
W
N
V
UPC
U
P
560
V
VP1
V
CC
GND
OUT
GND
In
V
VPC
V
P
560
V
WP1
V
CC
GND
G
T
T
OUT
GND
In
V
WPC
U
N
U
N
560
560
560
33
V
N
V
D4
V
N1
V
NC
W
N
F
O
V
N
W
N
F
O
V
CC
O
UN
S
UN
O
VN
O
WN
S
WN
S
VN
GND
W
P
+
+
+
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM
’
s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each switching opto-coupler.
Slow switching opto-coupler : CTR = 100%~200%
Use 4 isolated control power supplies (V
D
). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.
MITSUBISHI SEMICONDUCTOR <INTELLIGENT POWER MODULES>
PM50CTJ060-3
INSULATED PACKAGE
FLAT-BASE TYPE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PM50CTK060 | FLAT-BASE TYPE INSULATED PACKAGE |
| PM50RHA060 | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C) |
| PM50RHB060 | TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C) |
| PM50RHA120 | FLAT BASE TYPE INSULATED PACKAGE |
| PM50RLA060 | LEAD FREE A6278 SOIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM50CTK060 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50RHA060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C) |
| PM50RHA120 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT BASE TYPE INSULATED PACKAGE |
| PM50RHB060 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C) |
| PM50RL1A060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 50A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 50A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):50A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR |
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