參數(shù)資料
型號： PM50CTJ060-3
廠商： Mitsubishi Electric Corporation
英文描述： INSULATED PACKAGE FLAT-BASE TYPE
中文描述： 絕緣包裝平性基地型
文件頁數(shù)： 3/6頁
文件大?。?/td> 100K
代理商： PM50CTJ060-3
Mar. 2001
T
j
= 25
°
C
T
j
= 125
°
C
P
N
U
V
W
Tc
TOTAL SYSTEM
Parameter
Symbol
Supply voltage protected
by OC & SC
Module case operating temperature
Storage temperature
Isolation voltage
Conditions
T
C
T
stg
V
iso
Ratings
V
CC(PROT)
400
–
20 ~ +100
–
40 ~ +125
2500
Unit
°
C
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V,
Inverter part, T
j
= 125
°
C start
(Note 1)
60Hz, sinusoidal, Charged part to Base, AC
·
1 min.
Note 1 : T
C
measurement point.
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
Case to fin, (per 1 module) thermal grease applied
THERMAL RESISTANCES
Symbol
Parameter
Test conditions
Unit
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
°
C / W
°
C / W
°
C / W
Limits
Tye.
—
—
—
Min.
—
—
—
Max.
1.2
2.9
0.4
Junction to case
thermal resistances
Contact thermal resistance
Collector-emitter
saturation voltage
FWD forward voltage
Collector-emitter
cutoff current
Min.
—
—
—
0.5
—
—
—
—
—
—
Typ.
1.8
2.0
2.5
1.0
0.1
0.3
3.0
1.0
—
—
Max.
2.6
3.0
3.5
2.0
—
0.9
4.0
2.0
–
I
C
= 50A, V
D
= 15V, I
CIN
= 0mA
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
V
mA
Unit
Parameter
Symbol
Test conditions
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
V
μ
s
μ
s
μ
s
μ
s
μ
s
1
10
Switching time
V
D
= 15V, I
CIN
= 0mA
10mA
V
CC
= 300V, I
C
= 50A
T
j
= 125
°
C
Inductive Load (Upper-Lower Arm)
(Fig. 3)
V
CE
= V
CES
, V
D
= 15V (Fig. 4)
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
V
D
= 15V, I
CIN
= 10mA
I
C
= 50A, Pulsed (Fig. 1)
MITSUBISHI SEMICONDUCTOR <INTELLIGENT POWER MODULES>
PM50CTJ060-3
INSULATED PACKAGE
FLAT-BASE TYPE
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM50CTK060 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
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PM50RHB060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
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