參數(shù)資料
型號(hào)： PM50CTJ060-3
廠商： Mitsubishi Electric Corporation
英文描述： INSULATED PACKAGE FLAT-BASE TYPE
中文描述： 絕緣包裝平性基地型
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 100K
代理商： PM50CTJ060-3
Mar. 2001
V
V
V
A
A
W
°
C
450
500
600
50
100
100
–
20 ~ +125*
Applied between : P-N
Applied between : P-N, Surge value
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Collector current
Collector current (peak)
Collector dissipation
Junction temperature
V
NC
V
N1
F
O
W
N
V
N
U
N
V
WPC
W
P
V
WP1
V
VPC
V
P
V
VP1
V
UPC
U
P
V
UP1
GND In
V
CC
GND
Out
GND In
V
CC
GND
Out
GND In
V
CC
GND
Out
S
WN
O
WN
S
VN
O
VN
S
UN
O
UN
GND V
CC
F
O
W
N
V
N
U
N
Tc
Tb
GND
N
W
V
U
P
V
CC
V
CC(surge)
V
CES
±
I
C
±
I
CP
P
C
T
j
*
The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the IPM to ensure safe operation. However, these power elements
can endure junction temperature as high as 150
°
C instantaneously. To make use of this additional temperature allowance, a detailed study of the exact applica-
tion conditions is required and, accordingly, necessary information is requested to be provided before use.
MITSUBISHI SEMICONDUCTOR <INTELLIGENT POWER MODULES>
PM50CTJ060-3
INSULATED PACKAGE
FLAT-BASE TYPE
MAXIMUM RATINGS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Symbol
Parameter
Conditions
Ratings
Unit
EQUIVALENT CIRCUIT DIAGRAM
Ratings
Applied between : V
UP1
-V
UPC
, V
VP1
-V
VPC
V
WP1
-V
WPC
, V
N1
-V
NC
At : U
P
, V
P,
W
P,
U
N
, V
N
, W
N
terminals
Applied between : F
O
-V
NC
Sink current of F
O
terminals
I
CIN
V
FO
I
FO
Input current
Fault output supply voltage
Fault output current
Conditions
CONTROL PART
Symbol
Parameter
Unit
mA
V
mA
20
20
20
V
D
Supply voltage
20
V
相關(guān)PDF資料
PDF描述
PM50CTK060 FLAT-BASE TYPE INSULATED PACKAGE
PM50RHA060 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
PM50RHB060 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
PM50RHA120 FLAT BASE TYPE INSULATED PACKAGE
PM50RLA060 LEAD FREE A6278 SOIC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PM50CTK060 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE
PM50RHA060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
PM50RHA120 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT BASE TYPE INSULATED PACKAGE
PM50RHB060 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)
PM50RL1A060 制造商:Powerex Power Semiconductors 功能描述:MOD IPM 7-PAC L1 50A 600V 制造商:Powerex Power Semiconductors 功能描述:INTELLIGENT POWER MODULE, IGBT, 50A, 600V, MODULE; IPM Power Device:IGBT; Voltage Rating (Vces / Vdss):600V; Current Rating (Ic / Id):50A; Isolation Voltage:2.5kV; IPM Series:Intellimod L1 制造商:Mitsubishi Electric 功能描述:POWER IPM TRANSISTOR 制造商:Powerex Power Semiconductors 功能描述:POWER IPM TRANSISTOR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*