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參數(shù)資料
| 型號： | PM50B4LA060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型絕緣包裝 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 155K |
| 代理商： | PM50B4LA060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B4LA060
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2005
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
V
CC(surge)
T
stg
V
iso
Ratings
V
CC(PROT)
450
500
–40 ~ +125
2500
Unit
V
°
C
V
rms
V
V
D
= 13.5 ~ 16.5V, Inverter Part,
T
j
= +125
°
C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2.3
2.0
3.3
1.4
0.2
0.4
1.8
0.2
1
10
Min.
—
—
—
0.3
—
—
—
—
—
—
Typ.
1.7
1.55
2.2
0.7
0.1
0.2
0.9
0.2
—
—
Max.
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Collector-Emitter
Cutoff Current
–I
C
= 50A, V
D
= 15V, V
CIN
= 15V
(Fig. 2)
T
j
= 25
°
C
T
j
= 125
°
C
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
V
CE(sat)
I
CES
V
EC
t
on
t
rr
t
c(on)
t
off
t
c(off)
Limits
T
j
= 25
°
C
T
j
= 125
°
C
Switching Time
V
D
= 15V, V
CIN
= 0V
15V
V
CC
= 300V, I
C
= 50A
T
j
= 125
°
C
Inductive Load
(Fig. 3,4)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 5)
V
D
= 15V, I
C
= 50A
V
CIN
= 0V
(Fig. 1)
TOTAL SYSTEM
V
mA
V
μ
s
Unit
0.95
1.61
0.038
°
C/W
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Inverter IGBT part (per 1/4 module)
Inverter FWDi part (per 1/4 module)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
Symbol
Condition
Unit
Min.
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) Tc (under the chip) measurement point is below.
Parameter
Limits
Typ.
Max.
UP
IGBT
31.1
–10.0
VP
UN
VN
FWDi
30.6
–2.2
IGBT
61.0
–10.0
FWDi
60.5
–2.2
IGBT
38.2
8.0
FWDi
40.7
0.2
IGBT
52.9
8.0
FWDi
50.4
0.2
arm
axis
X
Y
(unit : mm)
Bottom view
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