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參數(shù)資料
| 型號(hào)： | PM50B4LB060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型絕緣包裝 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | PM50B4LB060 |
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B4LB060
FLAT-BASE TYPE
INSULATED PACKAGE
PM50B4LB060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT
TM
) chip, which
performance is improved by 1
μ
m fine rule process.
For example, typical V
ce
(sat)=1.55V @Tj=125
°
C
b) Over-temperature protection by detecting Tj of the CSTBT
TM
chips and error output is possible from all each conserva-
tion upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
2
φ
50A, 600V Current-sense IGBT type inverter
Monolithic gate drive & protection logic
Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
UL Recognized
Yellow Card No.E80276(N)
File No.E80271
APPLICATION
Photo voltaic power conditioner
PACKAGE OUTLINES
Dimensions in mm
22
7.75
98.25
2.5
23
23
23
19.5
2
2
5
L A B E L
17
16
3
9.5
1
1
11.5
2
φ
2
1. VUPC
2. UFO
3. UP
4. VUP1
5. VVPC
6. VFO
7. VP
8. VVP1
9. NC
10. NC
11. NC
12. NC
13. VNC
14. VN1
15. NC
16. UN
17. VN
18. NC
19. Fo
Terminal code
19-
■
0.5
9
1
2
106
±
0.25
66.5
19.75
3.25
7
4
4
3
4
4
4
4
4
4
4
4
4
4
16
15.25
6-2
3-2
3-2
3-2
16
16
120
N
P
1
5
B
U
V
W
9
13
19
4
φ
25
MOUNTING HOLES
2-
φ
5.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PM50B4LB060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5L1C060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM H-BRIDGE CHOPP 50A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT Module 制造商:Powerex Power Semiconductors 功能描述:IGBT Module, Transistor Polarity:-, DC Collector Current:50A, Collector Emitter |
| PM50B5LA060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM50B5LA060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5LB060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導(dǎo)體模塊 >> 功率驅(qū)動(dòng)器 系列:Intellimod™ 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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