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參數(shù)資料
| 型號： | PM50B4LB060 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | FLAT-BASE TYPE INSULATED PACKAGE |
| 中文描述： | 平性基地型絕緣包裝 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 154K |
| 代理商： | PM50B4LB060 |
MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B4LB060
FLAT-BASE TYPE
INSULATED PACKAGE
Oct. 2005
PERFORMANCE CURVES
10
0
2
3
5 7
10
1
2
3
5 7
10
2
30
40
20
60
50
10
00
1
0.5
1.5
2
T
j
= 25
°
C
15V
13V
V
D
= 17V
2
1.5
1
0.5
00
10
20
30
40
50
60
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
2
1.5
1
0.5
0
18
13
12
15
14
17
16
I
C
= 50A
T
j
= 25
°
C
T
j
= 125
°
C
10
–2
10
0
7
5
3
2
10
0
10
–1
7
5
3
2
2
3
5 7
10
1
2
3
5 7
10
2
t
c(on)
V
CC
= 300V
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
Inductive load
t
c(off)
t
c(off)
10
–1
10
1
7
5
3
2
10
0
7
5
3
2
t
off
V
CC
= 300V
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
Inductive load
t
on
t
on
t
off
10
0
2
3
5 7
10
1
2
3
5 7
10
2
10
–2
10
1
10
–1
10
0
7
5
3
2
7
5
3
2
7
5
3
2
E
SW(on)
E
SW(off)
E
SW(off)
V
CC
= 300V
V
D
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
Inductive load
C
S
C
(
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. V
D
) CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
C
C
(
COLLECTOR-EMITTER SATURATION VOLTAGE V
CE (sat)
(V)
C
S
C
(
CONTROL SUPPLY VOLTAGE V
D
(V)
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
S
c
,
c
(
μ
s
COLLECTOR CURRENT I
C
(A)
S
o
,
o
(
μ
s
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR CURRENT I
C
(A)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
S
S
,
S
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PM50B4LB060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5L1C060 | 制造商:Powerex Power Semiconductors 功能描述:MOD IPM H-BRIDGE CHOPP 50A 600V 制造商:Powerex Power Semiconductors 功能描述:IGBT Module 制造商:Powerex Power Semiconductors 功能描述:IGBT Module, Transistor Polarity:-, DC Collector Current:50A, Collector Emitter |
| PM50B5LA060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PM50B5LA060_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM50B5LB060 | 功能描述:MOD PV-IPM H-BRDG/CHOP 600V 50A RoHS:是 類別:半導體模塊 >> 功率驅(qū)動器 系列:Intellimod™ 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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