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參數(shù)資料
| 型號： | PLSI1032E-100LJ |
| 廠商： | LATTICE SEMICONDUCTOR CORP |
| 元件分類： | PLD |
| 英文描述： | High-Density Programmable Logic |
| 中文描述： | EE PLD, 12.5 ns, PQCC84 |
| 封裝： | PLASTIC, LCC-84 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 212K |
| 代理商： | PLSI1032E-100LJ |
4
Specifications
ispLSI and pLSI 1032E
Output Load Conditions (see Figure 2)
Switching Test Conditions
TEST CONDITION
R1
470
∞
470
R2
390
390
390
CL
35pF
35pF
35pF
A
B
Active High
Active Low
Active High to Z
at
V
OH
C
470
390
5pF
∞
390
5pF
Active Low to Z
at
V
+0.5V
OL
Table 2-0004/1032E
Figure 2. Test Load
+ 5V
R1
R2
CL
*
Device
Output
Test
Point
*
CL includes Test Fixture and Probe Capacitance.
0213a
DC Electrical Characteristics
Over Recommended Operating Conditions
V
OL
V
OH
I
IL
SYMBOL
1. One output at a time for a maximum duration of one second. V = 0.5V was selected to avoid test problems
by tester ground degradation. Characterized but not 100% tested.
2. Measured using eight 16-bit counters.
3. Typical values are at V = 5V and T = 25
°
C.
4. Maximum I varies widely with specific device configuration and operating frequency. Refer to the Power Consumption
section of this data sheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to
estimate maximum I .
Table 2-0007/1032E
1
I
IH
I
IL-isp
I
IL-PU
I
OS
PARAMETER
2, 4
I
CC
Output Low Voltage
Output High Voltage
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
ispEN Input Low Leakage Current
I/O Active Pull-Up Current
Output Short Circuit Current
Operating Power Supply Current
I = 8 mA
I = -4 mA
0V
≤
V
≤
V (Max.)
IN
3.5V
≤
V
≤
V
0V
≤
V
≤
V
0V
≤
V
≤
V
V = 5V, V = 0.5V
V = 0.5V, V = 3.0V
f = 1 MHz
IN
CC
IN
IL
IN
IL
CONDITION
MIN.
–
2.4
–
TYP.
–
–
–
MAX.
0.4
–
-10
UNITS
V
V
μ
A
3
–
–
–
–
–
–
–
–
–
–
190
190
10
-150
-150
-200
–
–
μ
A
μ
A
μ
A
mA
mA
mA
Commercial
Industrial
Input Pulse Levels
Table 2-0003/1032E
Input Rise and Fall Time
10% to 90%
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
GND to 3.0V
-125
Others
1.5V
1.5V
See Figure 2
3-state levels are measured 0.5V from
steady-state active level.
≤
2 ns
≤
3 ns
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