參數(shù)資料
型號: PIC18F44J50-I/ML
廠商: Microchip Technology
文件頁數(shù): 6/32頁
文件大?。?/td> 0K
描述: IC PIC MCU FLASH 16K 2V 44-QFN
產(chǎn)品培訓(xùn)模塊: XLP Deep Sleep Mode
PIC18 J Series MCU Overview
8-bit PIC® Microcontroller Portfolio
標(biāo)準(zhǔn)包裝: 45
系列: PIC® XLP™ 18F
核心處理器: PIC
芯體尺寸: 8-位
速度: 48MHz
連通性: I²C,SPI,UART/USART,USB
外圍設(shè)備: 欠壓檢測/復(fù)位,DMA,POR,PWM,WDT
輸入/輸出數(shù): 34
程序存儲器容量: 16KB(8K x 16)
程序存儲器類型: 閃存
RAM 容量: 3.8K x 8
電壓 - 電源 (Vcc/Vdd): 2.15 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 13x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 44-VQFN 裸露焊盤
包裝: 管件
產(chǎn)品目錄頁面: 656 (CN2011-ZH PDF)
配用: AC164322-ND - MODULE SOCKET MPLAB PM3 28/44QFN
PIC18F2XJXX/4XJXX FAMILY
DS39687E-page 14
2009 Microchip Technology Inc.
3.2.1
MODIFYING CODE MEMORY
The previous programming example assumed that the
device had been Bulk Erased prior to programming. It
may be the case, however, that the user wishes to
modify only a section of an already programmed device.
The appropriate number of bytes required for the erase
buffer must be read out of code memory (as described
tion Word”) and buffered. Modifications can be made
on this buffer. Then, the block of code memory that was
read out must be erased and rewritten with the
modified data. The code sequence is shown in
The WREN bit must be set if the WR bit in EECON1 is
used to initiate a write sequence.
3.2.2
CONFIGURATION WORD
PROGRAMMING
Since the Flash Configuration Words are stored in
program memory, they are programmed as if they were
program data. Refer to Section 3.2 “Code Memory
Memory” for methods and examples on programming
or modifying program memory. See also Section 5.0
“Configuration Word” for additional information on
the Configuration Words.
TABLE 3-4:
MODIFYING CODE MEMORY
4-Bit
Command
Data Payload
Core Instruction
Step 1: Set the Table Pointer for the block to be erased.
0000
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
MOVLW
<Addr[21:16]>
MOVWF
TBLPTRU
MOVLW
<Addr[8:15]>
MOVWF
TBLPTRH
MOVLW
<Addr[7:0]>
MOVWF
TBLPTRL
Step 2: Read and modify code memory (see Section 4.1 “Read Code Memory”).
Step 3: Enable memory writes and set up an erase.
0000
84 A6
88 A6
BSF
EECON1, WREN
BSF
EECON1, FREE
Step 4: Initiate erase.
0000
82 A6
00 00
BSF
EECON1, WR
NOP - hold PGC high for time P10.
Step 5: Load write buffer. The correct bytes will be selected based on the Table Pointer.
0000
1101
.
1111
0000
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
<MSB><LSB>
.
<MSB><LSB>
00 00
MOVLW
<Addr[21:16]>
MOVWF
TBLPTRU
MOVLW
<Addr[8:15]>
MOVWF
TBLPTRH
MOVLW
<Addr[7:0]>
MOVWF
TBLPTRL
Write 2 bytes and post-increment address by 2.
Repeat write operation 30 more times to fill the write buffer
Write 2 bytes and start programming.
NOP - hold PGC high for time P9.
Step 6: Repeat Step 5 for a total of 16 times (if rewriting the entire 1024 bytes of the erase page size).
Step 7: To continue modifying data, repeat Steps 1 through 5, where the Address Pointer is incremented by 1024 bytes at each
iteration of the loop.
Step 8: Disable writes.
0000
94 A6
BCF
EECON1, WREN
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