參數(shù)資料
型號: pic16cr54c
廠商: Microchip Technology Inc.
英文描述: ROM-Based 8-Bit CMOS Microcontroller Series(8位CMOS微控制器)
中文描述: 基于ROM的8位CMOS微控制器系列(8位的CMOS微控制器)
文件頁數(shù): 54/84頁
文件大小: 654K
代理商: PIC16CR54C
PIC16CR54C
DS40191A-page 54
Preliminary
1998 Microchip Technology Inc.
10.1
DC Characteristics:PIC16CR54C-04, 20 (Commercial)
PIC16CR54C-04I, 20I (Industrial)
DC Characteristics
Power Supply Pins
Standard Operating Conditions (unless otherwise specified)
Operating Temperature
0
°
C
T
A
+70
°
C (commercial)
–40
°
C
T
A
+85
°
C (industrial)
Characteristic
Sym
Min
Typ
(1)
Max Units
Conditions
Supply Voltage
XT, RC and LP options
HS option
RAM Data Retention Voltage
(2)
V
DD
start voltage to ensure
Power-On Reset
V
DD
rise rate to ensure
Power-On Reset
Supply Current
(3)
XT and RC
options
HS option
LP option, Commercial
LP option, Industrial
Power Down Current
(5)
Commercial
V
DD
3.0
4.5
5.5
5.5
V
V
V
V
V
DR
V
POR
1.5*
V
SS
Device in SLEEP mode
See Section 7.4 for details on
Power-on Reset
V/ms See Section 7.4 for details on
Power-on Reset
S
VDD
0.05*
I
DD
1.8
4.5
14
17
2.4
16
32
40
mA
mA
μ
A
μ
A
F
OSC
= 4.0 MHz, V
DD
= 5.5V
F
OSC
= 20 MHz, V
DD
= 5.5V
F
OSC
= 32 kHz, V
DD
= 3.0V, WDT disabled
F
OSC
= 32 kHz, V
DD
= 3.0V, WDT disabled
Industrial
I
PD
4.0
0.25
4.0
0.25
12
4.0
14
5.0
μ
A
μ
A
μ
A
μ
A
V
DD
= 3.0V, WDT enabled
V
DD
= 3.0V, WDT disabled
V
DD
= 3.0V, WDT enabled
V
DD
= 3.0V, WDT disabled
* These parameters are characterized but not tested.
Note 1: Data in the Typical (“Typ”) column is based on characterization results at 25
°
C. This data is for design guidance
only and is not tested.
2: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
3: The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern, and temperature also have an impact on
the current consumption.
a) The test conditions for all I
DD
measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail; all I/O pins tristated, pulled to
V
ss
, T0CKI = V
DD
, MCLR = V
DD
; WDT enabled/disabled as specified.
b) For standby current measurements, the conditions are the same, except that
the device is in SLEEP mode.
4: Does not include current through Rext. The current through the resistor can be estimated by the
formula: I
R
= V
DD
/2Rext (mA) with Rext in k
.
5: The power down current in SLEEP mode does not depend on the oscillator type. Power down current is
measured with the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V
DD
and V
SS
.
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