參數(shù)資料
型號(hào)： PHX20N06T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS⑩ standard level FET
中文描述： 12.9 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220, FULL PACK-3
文件頁(yè)數(shù)： 2/12頁(yè)
文件大小： 89K
代理商： PHX20N06T
Philips Semiconductors
PHX20N06T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 16 February 2004
2 of 12
9397 750 12834
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
External heatsink connected to mounting base.
Table 2:
Type number
Ordering information
Package
Name
TO-220F
Description
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
3 lead TO-220 ‘full pack’
Version
SOT186A
PHX20N06T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
Max
55
55
±
20
12.9
8.1
51.6
23
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
h
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
h
= 100
°
C; V
GS
= 10 V;
Figure 2
T
h
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
h
= 25
°
C;
Figure 1
[1]
[1]
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
h
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
[1]
[1]
-
55
55
T
h
= 25
°
C
[1]
-
-
12.9
51.6
A
A
[1]
unclamped inductive load; I
D
= 11 A;
t
p
= 0.06 ms; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
-
30.3
mJ
相關(guān)PDF資料
PDF描述
PHX45NQ11T N-channel TrenchMOS standard level FET
PHX4N40E PowerMOS transistors Avalanche energy rated
PHX4N50E PowerMOS transistor Isolated version of PHP4N50E
PHX4N60E PowerMOS transistors Avalanche energy rated
PHX4ND40E PowerMOS transistors FREDFET, Avalanche energy rated
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHX20N06T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX23NQ10T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHX23NQ10T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX23NQ11T,127 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHX27NQ11T,127 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*