參數(shù)資料
型號(hào): PHT8N06T
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標(biāo)準(zhǔn)電平場(chǎng)效應(yīng)管)
中文描述: 3.5 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-4
文件頁(yè)數(shù): 9/10頁(yè)
文件大?。?/td> 72K
代理商: PHT8N06T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT8N06T
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.11 g
Fig.20. SOT223 surface mounting package.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
6.7
6.3
3.1
2.9
4
1
2
3
2.3
1.05
0.85
0.80
0.60
4.6
3.7
3.3
7.3
6.7
B
A
0.10
0.02
13
16
max
1.8
max
10
max
0.32
0.24
(4x)
B
M
0.1
A
M
0.2
December 1997
9
Rev 1.100
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